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GaS (alpha phase) is a semiconductor with an indirect band gap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides.
The Gallium sulfide crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm. The crystals are yellow colored and transparent.
GaS crystal properties
| Crystal size | ~10 mm |
| Electrical properties | Semiconductor |
| Crystal structure | Hexagonal |
| Unit cell parameters | a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120° |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX |
XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
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