Crystal size	~10 mm
Electrical properties	Metal, Superconductor (Tc~7.2K), Charge Density Waves (CDW) system, Tcdw ~33K
Crystal structure	hexagonal
Unit cell parameters	a = b = 0.344 nm, c = 1.255 nm, α = β = 90°, γ = 120°
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on 2H NbSe2:

X-ray diffraction on a 2H phase NbSe2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal 2H NbSe2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H NbSe2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H NbSe2. Measurement was performed with a 785 nm Raman system at room temperature.