2H-WS2 (2H phase Tungsten Disulfide)

2H-WS2 is a semiconductor with an indirect band gap of ~1.3 eV. Monolayer 2H-WS2 has a direct band gap. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Tungsten Disulfide belongs to the group-VI transition metal dichalcogenides (TMDC). 

The 2H phase WS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. The 2H WS2 is n-type semiconductor, having a typical charge carrier density of ~10¹⁴cm^-3 at room temperature. A selection of peer review publications on the 2H-WS2 grown at HQ Graphene can be found below.
 2H-WS2 crystal properties

The single crystal 2H WS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker) 
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis 
Raman: 785 nm Raman system 
Hall measurement: Extraction of charge carrier density and doping in the Van der Pauw geometry.

Raman, XRD and EDX on 2H-WS2:

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X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
 Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
 Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).
 Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.